Normal-State Electronic Properties of Sn0.12Eu1.08Mo6S8 at Low Temperature and High Pressure
The Hall coefficient and resistivity of Sn0.12Eu1.08Mo6S8 have been measured over the range 1.5100 K. A band model is proposed which is qualitatively consistent with the data.
Hambourger, Paul D.; Huang, C. Y.; Luo, H. L.; and Segall, B., "Normal-State Electronic Properties of Sn0.12Eu1.08Mo6S8 at Low Temperature and High Pressure" (1981). Physics Faculty Publications. 173.
Hambourger, P.D., et al. 1981. Normal-state electronic properties of Sn0.12Eu1.08Mo6S8 at low temperature and high pressure. Physica B+C 108, no. 1-3:1269-1270.