Normal-State Electronic Properties of Sn_0.12Eu_1.08Mo₆S₈ at Low Temperature and High Pressure

Authors

Paul D. Hambourger, Cleveland State UniversityFollow
C. Y. Huang, Los Alamos National Laboratory
H. L. Luo, University of California, San Diego
B. Segall, Case Western Reserve University

Document Type

Article

Publication Date

1981

Publication Title

Physica B&C

Abstract

The Hall coefficient and resistivity of Sn_0.12Eu_1.08Mo₆S₈ have been measured over the range 1.5100 K. A band model is proposed which is qualitatively consistent with the data.

Repository Citation

Hambourger, Paul D.; Huang, C. Y.; Luo, H. L.; and Segall, B., "Normal-State Electronic Properties of Sn_0.12Eu_1.08Mo₆S₈ at Low Temperature and High Pressure" (1981). Physics Faculty Publications. 173.
https://engagedscholarship.csuohio.edu/sciphysics_facpub/173

Original Citation

Hambourger, P.D., et al. 1981. Normal-state electronic properties of Sn_0.12Eu_1.08Mo₆S₈ at low temperature and high pressure. Physica B+C 108, no. 1-3:1269-1270.

DOI

10.1016/0378-4363(81)90934-7

Volume

108

Issue

1-3