Electronic Conduction Process in 1T-TaS2
Document Type
Article
Publication Date
1-1980
Publication Title
Physica B+C
Abstract
The electrical resistivity parallel to the layers of Se-doped 1T-TaS2 has been measured over the range 1.3 < T < 240 K. Results support the existence of disorder-induced carrier localization in this material. Anisotropy studies in pure samples show that θc/θa ~ 500, where θc and θa are the resistivities normal and parallel to the layers, respectively, suggesting that the conduction is 2-dimensional.
Repository Citation
Hambourger, Paul D. and Di Salvo, F. J., "Electronic Conduction Process in 1T-TaS2" (1980). Physics Faculty Publications. 172.
https://engagedscholarship.csuohio.edu/sciphysics_facpub/172
Original Citation
Hambourger, P.D. and F.J. di Salvo. 1980. Electronic conduction process in 1T-TaS2. Physica B+C 99, no. 1-4:173-176.
DOI
10.1016/0378-4363(80)90227-2
Volume
99
Issue
1-4
