Electronic Conduction Process in 1T-TaS₂

Authors

Paul D. Hambourger, Cleveland State UniversityFollow
F. J. Di Salvo, Bell Laboratories

Document Type

Article

Publication Date

1-1980

Publication Title

Physica B+C

Abstract

The electrical resistivity parallel to the layers of Se-doped 1T-TaS₂ has been measured over the range 1.3 < T < 240 K. Results support the existence of disorder-induced carrier localization in this material. Anisotropy studies in pure samples show that θ_c/θ_a ~ 500, where θ_c and θ_a are the resistivities normal and parallel to the layers, respectively, suggesting that the conduction is 2-dimensional.

Repository Citation

Hambourger, Paul D. and Di Salvo, F. J., "Electronic Conduction Process in 1T-TaS₂" (1980). Physics Faculty Publications. 172.
https://engagedscholarship.csuohio.edu/sciphysics_facpub/172

Original Citation

Hambourger, P.D. and F.J. di Salvo. 1980. Electronic conduction process in 1T-TaS₂. Physica B+C 99, no. 1-4:173-176.

DOI

10.1016/0378-4363(80)90227-2

Volume

99

Issue

1-4