Document Type
Article
Publication Date
10-1-2009
Publication Title
Surface Science
Abstract
Highly strained thin layers of GaSb/GaAs possess a (2 × 4) reconstruction at low Sb overpressures, and a (2 × 8) reconstruction at high Sb overpressures. While the atomic details of the Sb/GaAs-(2 × 4) are well known, the details of the (2 × 8) are not understood. In this paper, we use density functional theory to analyze possible (2 × 8) structures. Comparing scanning tunneling microscope images from both simulation and experiment and examining the relative energies of possible (2 × 8) structures, we show the α(2 × 8) and β(2 × 8) are the thermodynamically stable surface reconstructions for high Sb content films strained to the GaAs lattice parameter. The α and β(2 × 8) reconstructions are related to the GaAs-α2(2 × 4) and GaAs-β2(2 × 4) through the addition of 2 cations and 8 anions into the trench between adjacent (2 × 4) unit cells.
Repository Citation
Bickel, Jessica E.; Modine, Normand A.; and Millunchick, Joanna Mirecki, "Determining The GaSb/GaAs-(2 × 8) Reconstruction" (2009). Physics Faculty Publications. 193.
https://engagedscholarship.csuohio.edu/sciphysics_facpub/193
DOI
10.1016/j.susc.2009.07.044
Version
Postprint
Publisher's Statement
NOTICE: this is the author’s version of a work that was accepted for publication in Surface Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Surface Science, 603, 19, October 2009 DOI#10.1016/j.susc.2009.07.044
Volume
603
Issue
19
Comments
This work was performed in part at the US Department of Energy, Center for Integrated Nanotechnologies, at Los Alamos National Laboratory (Contract DE-AC52-06NA25396) and Sandia National Laboratories (Contract DE-AC04-94AL85000).