Highly strained thin layers of GaSb/GaAs possess a (2 × 4) reconstruction at low Sb overpressures, and a (2 × 8) reconstruction at high Sb overpressures. While the atomic details of the Sb/GaAs-(2 × 4) are well known, the details of the (2 × 8) are not understood. In this paper, we use density functional theory to analyze possible (2 × 8) structures. Comparing scanning tunneling microscope images from both simulation and experiment and examining the relative energies of possible (2 × 8) structures, we show the α(2 × 8) and β(2 × 8) are the thermodynamically stable surface reconstructions for high Sb content films strained to the GaAs lattice parameter. The α and β(2 × 8) reconstructions are related to the GaAs-α2(2 × 4) and GaAs-β2(2 × 4) through the addition of 2 cations and 8 anions into the trench between adjacent (2 × 4) unit cells.
Bickel, Jessica E.; Modine, Normand A.; and Millunchick, Joanna Mirecki, "Determining The GaSb/GaAs-(2 × 8) Reconstruction" (2009). Physics Faculty Publications. 193.
NOTICE: this is the author’s version of a work that was accepted for publication in Surface Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Surface Science, 603, 19, October 2009 DOI#10.1016/j.susc.2009.07.044