Observation of the Transition from Semiconductor to High-Tc Superconductor in (SnxEu1-X)YMo6S8 Under High Pressure

Authors

D. W. Harrison
K. C. Lim
J. D. Thompson
C. Y. Huang
Paul D. Hambourger, Cleveland State UniversityFollow
H. L. Luo

Document Type

Article

Publication Date

1-26-1981

Publication Title

Physical Review Letters

Abstract

Pressure-induced high-temperature superconductivity is observed in semiconducting (Sn_xEu_1-x)_yMo₆S₈, where 0<~x<~0.1 and y=1.0 and 1.2, having a carrier concentration ≃10¹⁹/cm³ at 4.2 K as determined from Hall-effect measurements. Above a threshold pressure ≃7 kbar, superconductivity appears with dT_c/dP≃2 K/kbar. The maximum superconducting temperature (T_c∼10 K), reached at ∼ 12 kbar, represents the highest pressure-induced T_c in any semiconductor. For P>~13 kbar, the temperature-dependent resistance appears metallic.

Repository Citation

Harrison, D. W.; Lim, K. C.; Thompson, J. D.; Huang, C. Y.; Hambourger, Paul D.; and Luo, H. L., "Observation of the Transition from Semiconductor to High-Tc Superconductor in (SnxEu1-X)YMo6S8 Under High Pressure" (1981). Physics Faculty Publications. 46.
https://engagedscholarship.csuohio.edu/sciphysics_facpub/46

Original Citation

Harrison, D. W. , K. C. Lim, J. D. Thompson, C. Y. Huang, Paul D. Hambourger, and H. L. Luo. "Observation of the Transition from Semiconductor to High-Tc Superconductor in (SnxEu1-X)YMo6S8 Under High Pressure." Physical Review Letters 46 (1981): 280-283.

DOI

10.1103/PhysRevLett.46.280

Version

Publisher's PDF

Publisher's Statement

Copyright 1981 American Physical Society. Available on publisher's site at http://link.aps.org/doi/10.1103/PhysRevLett.46.280.

Volume

46

Issue

4