Observation of the Transition from Semiconductor to High-Tc Superconductor in (SnxEu1-X)YMo6S8 Under High Pressure
Physical Review Letters
Pressure-induced high-temperature superconductivity is observed in semiconducting (SnxEu1-x)yMo6S8, where 0<~x<~0.1 and y=1.0 and 1.2, having a carrier concentration ≃1019/cm3 at 4.2 K as determined from Hall-effect measurements. Above a threshold pressure ≃7 kbar, superconductivity appears with dTc/dP≃2 K/kbar. The maximum superconducting temperature (Tc∼10 K), reached at ∼ 12 kbar, represents the highest pressure-induced Tc in any semiconductor. For P>~13 kbar, the temperature-dependent resistance appears metallic.
Harrison, D. W.; Lim, K. C.; Thompson, J. D.; Huang, C. Y.; Hambourger, Paul D.; and Luo, H. L., "Observation of the Transition from Semiconductor to High-Tc Superconductor in (SnxEu1-X)YMo6S8 Under High Pressure" (1981). Physics Faculty Publications. 46.
Harrison, D. W. , K. C. Lim, J. D. Thompson, C. Y. Huang, Paul D. Hambourger, and H. L. Luo. "Observation of the Transition from Semiconductor to High-Tc Superconductor in (SnxEu1-X)YMo6S8 Under High Pressure." Physical Review Letters 46 (1981): 280-283.
Copyright 1981 American Physical Society. Available on publisher's site at http://link.aps.org/doi/10.1103/PhysRevLett.46.280.